Computer Simulation of Electron and Ion Beam Lithography of Nanostructures
نویسنده
چکیده
In this paper a review of the authors results on mathematical modeling of the processes at electron or ion beam lithography of nanostructures is presented. Our Monte Carlo simulation tools for electron and ion exposures are successfully applied for the energy deposition calculation at electron or ion lithography of resist layers. At ion lithography electronic energy losses of penetrating electrons are responsible for the usable resist modification. Development models are different for used resists in nanolithography and are of special interest. Examples of linear and nonlinear (multi-ciphered) dependencies of the solubility rate on exposure dose are given. Some examples of numerical simulation results for 2D and 3D resist profiles obtained using electron and ion lithography are presented.
منابع مشابه
Computer Simulation of Processes at Electron and Ion Beam Lithography, Part 2: Simulation of Resist Developed Images at Electron and Ion Beam Lithography
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